SCOPUS 정보 검색 플랫폼

Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 220-226

Cs-H2* defect in crystalline silicon

(7) Markevich, V P a,b Murin, L I b Hermansson, J c Kleverman, M c Lindstrom J L c Fukata, N d Suezawa, M d

a UNIVERSITY OF MANCHESTER (United Kingdom)

b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS (Belarus)

c LUND UNIVERSITY (Sweden)

d TOHOKU UNIVERSITY (Japan)

Author keywords

Absorption bands; Carbon; Hydrogen; Impurity complexes; Silicon

Indexed keywords

ANNEALING; CARBON; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); HYDROGEN; HYDROGENATION; INFRARED RADIATION; INTERFACES (MATERIALS); LATTICE VIBRATIONS; LIGHT ABSORPTION; OPTICAL CORRELATION; STRESS ANALYSIS;

CRYSTALLINE SILICONS;

SILICON;

EID: 18544412415 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00432-X Document Type: Conference Paper

Times cited : (21)

References (17)

1
- 0001539439
- (1999) J. Appl. Phys. , vol.86 , pp. 1848
- Fukata, N.¹ Suezawa, M.²

2
- 0000746713
- (2000) J. Appl. Phys. , vol.87 , pp. 8361
- Fukata, N.¹ Suezawa, M.²

3
- 0003864995
- Springer, Berlin
- (1992) Hydrogen in Crystalline Semiconductors
- Pearton, S.J.¹ Corbett, J.W.² Stavola, M.³

4
- 0000526652
- (1999) Phys. Rev. B , vol.59 , pp. 7500
- Pajot, B.¹ Clerjaud, B.² Xu, Z.-J.³

5
- 0022146806
- (1985) Solid State Commun. , vol.56 , pp. 277
- Bai, G.R.¹ Qi, M.W.² Xie, L.M.³ Shi, T.S.⁴

6
- 0022135885
- (1985) Phys. Stat. Sol. (B) , vol.131 , pp. 511
- Shi, T.S.¹ Xie, L.M.² Bai, G.R.³ Qi, M.W.⁴

7
- 0342644317
- (1995) Mater. Sci. Forum , vol.196-201 , pp. 933
- Bech Neilsen, B.¹

8
- 0001274593
- (1998) Phys. Rev. B , vol.57 , pp. 3887
- Leary, P.¹ Jones, R.² Oberg, S.³

9
- 0033313771
- (1999) Physica B , vol.273-274 , pp. 275
- Hoffman, L.¹ Lavrov, E.V.² Bech Nielsen, B.³ Lindstrom, J.L.⁴

10
- 0000013841
- (2000) Phys. Rev. B , vol.61 , pp. 16659
- Hoffmann, L.¹

11
- 0034668620
- (2000) Phys. Rev. B , vol.62 , pp. 12859
- Lavrov, E.V.¹

12
- 0001144490
- (1967) Proc. Phys. Soc. London , vol.90 , pp. 827
- Hughes, A.E.¹ Runciman, W.A.²

13
- 3743071232
- (1993) Phys. Rev. Lett. , vol.71 , pp. 875
- Holbech, J.D.¹

14
- 0004281127
- T.S. Moss (Ed.), Elsevier Science, Amsterdam
- (1994) Handbook on Semiconductors , vol.3 B
- Davies, G.¹ Newman, R.C.²

15
- 0000894998
- (1998) J. Appl. Phys. , vol.83 , pp. 2988
- Markevich, V.P.¹ Suezawa, M.²

16
- 0000423724
- (1998) Phys. Rev. B , vol.57
- Pritchard, R.E.¹ Ashwin, M.J.² Tucker, J.H.³ Newman, R.C.⁴

17
- 0001332088
- (1997) Phys. Rev. B , vol.56 , pp. 13118
- Pritchard, R.E.¹

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