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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 19, 2000, Pages 12859-12867

Combined infrared absorption and modeling study of a dicarbon-dihydrogen defect in silicon

(7) Lavrov, E V a Hoffmann, L a Bech Nielsen, B a Hourahine, B b Jones, R b Oberg S c Briddon, P R d

a AARHUS UNIVERSITY (Denmark)

b UNIVERSITY OF EXETER (United Kingdom)

c LULEÅ UNIVERSITY OF TECHNOLOGY (Sweden)

d NEWCASTLE UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTALLIN; HYDROGEN; SILICON;

ABSORPTION SPECTROPHOTOMETRY; ARTICLE; CALCULATION; CRYSTALLIZATION; DENSITY; HYDROGEN BOND; INFRARED SPECTROSCOPY;

EID: 0034668620 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.12859 Document Type: Article

Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.