MOCVD of vertically aligned ZnO nanowires using bidentate ether adducts of dimethylzinc

Chemical Vapor Deposition

Volumn 17, Issue 1-3, 2011, Pages 45-53

  Ashraf, Sobia ^a   Jones, Anthony C ^a   Bacsa, John ^a   Steiner, Alexander ^a   Chalker, Paul R ^a   Beahan, Peter ^a   Hindley, Sarah ^b   Odedra, Rajesh ^b   Williams, Paul A ^b   Heys, Peter N ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b SAFC Hitech   (United Kingdom)

Author keywords

Crystal structures; Dimethylzinc bidentate ether adducts; MOCVD; ZnO NWs

Indexed keywords

BOND ANGLE; DEFECT-RELATED EMISSION; DEPOSITION TEMPERATURES; DIMETHYLZINC; GLASS SUBSTRATES; GREEN LUMINESCENCE; HIGH PURITY; LIGAND INTERACTIONS; LOW-INTENSITY; METAL-ORGANIC; MOCVD; MONOMERIC COMPLEXES; NEAR BAND EDGE EMISSIONS; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI (1 1 1); SINGLE CRYSTAL X-RAY STRUCTURES; SUBSTRATE TEMPERATURE; VERTICALLY ALIGNED; ZNO; ZNO FILMS; ZNO NANOWIRES; ZNO NWS;

AUGER ELECTRON SPECTROSCOPY; CARBON FILMS; DEFECTS; ETHERS; LIGANDS; METALLIC FILMS; NANOWIRES; ORGANIC COMPOUNDS; POLYMERS; SUBSTRATES; SULFUR; X RAY DIFFRACTION; ZINC;

ZINC OXIDE;

EID: 79952756315     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.201006881     Document Type: Article

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