A new method for the growth of zinc oxide nanowires by MOCVD using oxygen-donor adducts of dimethylzinc

Chemical Vapor Deposition

Volumn 16, Issue 1-3, 2010, Pages 106-111

  Black, Kate ^a   Chalker, Paul R ^a   Jones, Anthony C ^a   King, Peter J ^a   Roberts, John L ^b   Heys, Peter N ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b SAFC Hitech   (United Kingdom)

Author keywords

Dimethylzinc adducts; Liquid injection mocvd; ZnO nanowires

Indexed keywords

BAND-EDGE PHOTOLUMINESCENCE; DEPOSITION TEMPERATURES; DETECTION LIMITS; DIMETHYLZINC; EMISSION ENERGIES; HIGH PURITY; LIQUID INJECTIONS; LIQUID-INJECTION MOCVD; METAL-ORGANIC; MINIMAL DEFECT; MOCVD; NARROW TEMPERATURE RANGES; OXYGEN DONORS; POLYCRYSTALLINE MORPHOLOGY; PRE-REACTIONS; ROOM TEMPERATURE; TEMPERATURE RANGE; TETRA-HYDROFURAN; TETRAHYDROPYRAN; VISIBLE EMISSIONS; ZINC OXIDE NANOWIRES; ZNO; ZNO FILMS; ZNO NANOWIRES;

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; LIQUIDS; NANOWIRES; OXYGEN; ZINC;

ZINC OXIDE;

EID: 77950220933     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200906831     Document Type: Article

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