Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 1030-1033

  Wang, Buguo ^a,b   Bliss, David ^b   Suscavage, Michael ^b   Swider, Stacy ^a   Lancto, Robert ^a   Lynch, Candace ^b   Weyburne, David ^b   Li, Ti ^c   Ponce, Fernando A ^c  

^a SOLID STATE SCIENTIFIC CORPORATION   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

A1. HVPE seed; A2. Crystal growth; A2. The ammonothermal technique; B1. Bulk GaN; B2. Characterization

Indexed keywords

A1. HVPE SEED; A2. CRYSTAL GROWTH; AMMONOTHERMAL; B1. BULK GAN; B2. CHARACTERIZATION;

CRYSTAL GROWTH; CRYSTALLIZATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

EID: 79952738789     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.080     Document Type: Conference Paper

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