Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films

Thin Solid Films

Volumn 519, Issue 11, 2011, Pages 3557-3561

  Okada, Koichi ^a   Kohiki, Shigemi ^a   Luo, Suning ^a,b   Sekiba, Daiichiro ^c   Ishii, Satoshi ^c   Mitome, Masanori ^d   Kohno, Atsushi ^e   Tajiri, Takayuki ^e   Shoji, Fumiya ^f  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b LIAONING UNIVERSITY OF TECHNOLOGY   (China)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e FUKUOKA UNIVERSITY   (Japan)

^f KYUSHU KYORITSU UNIVERSITY   (Japan)

Author keywords

Indium tin oxide thin films; Interstitial hydrogen; Oxygen vacancy; Rutherford backscattering spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

DEUTERIUM CONTENT; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; INDIUM TIN OXIDE; INDIUM TIN OXIDE THIN FILMS; INTERSTITIAL HYDROGEN; INTERSTITIAL SITES; OXYGEN CONTENT; OXYGEN DEFICIENT; PLASMA GAS; RUTHERFORD BACK-SCATTERING;

BACKSCATTERING; DEUTERIUM; ELECTRIC CONDUCTIVITY; ELECTRONS; HYDROGEN; INDIUM; INDIUM COMPOUNDS; ITO GLASS; OXIDE FILMS; OXYGEN; PHOTOELECTRICITY; PHOTONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

OXYGEN VACANCIES;

EID: 79952738435     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.249     Document Type: Article

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