Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 337-340

  Myronov, M ^a   Liu, Xue Chao ^a   Dobbie, A ^a   Leadley, D R ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Chemical vapor deposition processes; Germanium silicon alloys; Low dimensional structures; Quantum wells; Silicon photonics; Superlattices

Indexed keywords

CHEMICAL VAPOR DEPOSITION PROCESS; GERMANIUM SILICON ALLOYS; LOW DIMENSIONAL STRUCTURE; QUANTUM WELLS; SILICON PHOTONICS;

EPILAYERS; EPITAXIAL GROWTH; GERMANIUM; GERMANIUM ALLOYS; MONOLAYERS; MULTILAYERS; PHOTONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON ALLOYS; SUPERLATTICES; SURFACE ROUGHNESS;

CHEMICAL VAPOR DEPOSITION;

EID: 79952736275     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.133     Document Type: Conference Paper

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