Suppressing the dark current of metal-semiconductor-metal SiGe/Si heterojunction photodetector by using asymmetric structure

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3837-3839

  Hwang, J D ^a   Chang, W T ^a   Chen, Y H ^b   Kung, C Y ^b   Hu, C H ^a   Chen, P S ^c  

^a DA YEH UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Heterostructures; Optoelectronic devices; Silicon germanium

Indexed keywords

ELECTRIC POTENTIAL; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS;

ASYMMETRIC STRUCTURE; HETEROJUNCTION PHOTODETECTOR (HPD); REVERSE BIAS VOLTAGE; SILICON-GERMANIUM;

PHOTODETECTORS;

EID: 33846908117     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.017     Document Type: Article

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