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Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 505-508

MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of in content

(6) Sugita, K a Tanaka, M a Sasamoto, K a Bhuiyan, A G a Hashimoto, A a Yamamoto, A a

a UNIVERSITY OF FUKUI (Japan)

Author keywords

A1. Crystallites; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

A1.CRYSTALLITES; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; ADDUCT FORMATION; B1. NITRIDES; B2. SEMICONDUCTING INDIUM COMPOUNDS; BAND GAP ENERGY; DEVICE OPERATIONS; DEVICE STRUCTURES; DROPLET FORMATION; HETEROSTRUCTURES; INGAN ALLOY; MOVPE GROWTH; PARASITIC REACTION;

CRYSTALLITES; CRYSTALS; DROPS; FILM GROWTH; GALLIUM COMPOUNDS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHASE SEPARATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 79952735626 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.12.025 Document Type: Conference Paper

Times cited : (7)

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