Theoretical simulation of DC and RF performance for AlInN/lnGaN/AlInN double-heterojunction FET using a Monte Carlo approach

IEICE Electronics Express

Volumn 5, Issue 24, 2008, Pages 1074-1079

  Kodama, Kazuki ^a   Kuzuhara, Masaaki ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

Current gain cutoff frequency; Double heterojunction; FET; InGaN; InN; Monte Carlo simulation

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MONTE CARLO METHODS; MOSFET DEVICES; NITRIDES; POISSON EQUATION; SEMICONDUCTING GALLIUM;

CURRENT GAIN CUTOFF FREQUENCY; DOUBLE-HETEROJUNCTION; FET; INGAN; INN; MONTE CARLO SIMULATION;

CUTOFF FREQUENCY;

EID: 58149381871     PISSN: None     EISSN: 13492543     Source Type: Journal    
DOI: 10.1587/elex.5.1074     Document Type: Article

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