Tensile deformation behavior of nano-sized Mo particles reinforced SnAgCu solders

Materials Science and Engineering: A

Volumn 528, Issue 12, 2011, Pages 4166-4172

  Rao, B S S Chandra ^a,b   Kumar, K Mohan ^a   Kripesh, V ^b   Zeng, K Y ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Composite solders; Hollomon parameters; SnAgCu solder; Strain rate; Temperature; Yield strength

Indexed keywords

COPPER ALLOYS; DEFORMATION; LEAD-FREE SOLDERS; NANOPARTICLES; REINFORCEMENT; SILVER ALLOYS; STRAIN HARDENING; TENSILE STRENGTH; TERNARY ALLOYS; TIN ALLOYS; YIELD STRESS;

COMPOSITE SOLDERS; DEFORMATION BEHAVIOR; HOLLOMON PARAMETER; N VALUE; NANO SIZED; PARTICLE REINFORCED; SNAGCU SOLDER; STRAIN-HARDENING EXPONENT; STRAIN-RATES; TENSILE DEFORMATION;

STRAIN RATE;

EID: 79952694872     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2011.01.115     Document Type: Article

References (30)

1. European Union WEEE Directive, 3rd Draft, May 2000.
2. Frear D., Posthill J., Morris J. Metall. Mater. Trans. A 1989, 20:1325.
3. Cole M., Caulfield T. Scr. Metall. Mater. 1992, 27:903.
4. Kawashima K., Ito T., Sakuragi M. J. Mater. Sci. 1992, 27:6387.
5. Plumbridge W.J., Gagg C.R. J. Mater. Sci.: Mater. Electron. 1999, 10:461.
6. Shi X.Q., Zhou W., Pang H.L.J., Wang Z.P. ASME J. Electron. Packag. 1999, 121:179.
7. Long X., Dutta I., Sarihan V., Frear D.R. J. Electron. Mater. 2008, 37:189.
8. Yeung B., Jang J.W. J. Mater. Sci. Lett. 2002, 21:723.
9. Zhu F., Zhang H., Guan R., Liu S. J. Alloys Compd. 2007, 438:100.
10. Hollomon J.H. Trans. AMIE 1945, 162:268.
11. Monteiro S., Reed-Hill R. Metall. Mater. Trans. B 1973, 4:1011.
12. Mattila T., Kivilahti J. J. Electron. Mater. 2005, 34:969.
13. Hertzberg R.W. Deformation and Fracture Mechanics of Engineering Materials 1996, John Wiley and Sons, USA.
14. K.M. Kumar, Nano-Particle reinforced solders for microelectronic interconnect applications, Ph.D Thesis, Department of Mechanical Engineering, National University of Singapore, Singapore, 2010.
15. Jones W.K., Liu Y.Q., Zampino M.A., Gonzalez G.L. Advancing Microelectronics 1997, p. 30.
16. Lau J., Pap Y.H. Solder Joint Reliability of BGA, Flip Chip, CSP, and Fine Pitch SMT Assemblies 1997, Van Nostrand Reinhold, New York.
17. Liu S., Qing Z.F. Adv. Electron. Packag. ASME EEP 1997, 19:1599.
18. Bai N., Chen X., Fang Z. J. Electron. Mater. 2008, 37:1012.
19. Guozheng Y., Xuexia Y., Xuefeng S. Effects of strain rate and temperature on mechanical behavior of SACB solder alloy. International conference on Electronic Packaging Technology and High Density Packaging 2009, 1186.
20. Lang F., Tanaka H., Munegata O., Taguchi T., Narita T. Mater. Charact. 2005, 54:223.
21. Qin F., An T., Chen N. ASME J. Electron Packag. 2009, 131:031001.
22. Ninomiya R., Miyake K. Adv. Electron. Packag. 1997, 1329.
23. Bayraktar C.L.E., Altintas S. J. Phys. IV 1991, 3:61.
24. McDanels D. Metall. Mater. Trans. A 1985, 16:1105.
25. Zedalis M.S., Bryant J.D., Gilinan P.S., Das S.K. J. Met. 1991, 43:29.
26. Franetovic V., Shea M.M., Ryntz E.F. Mater. Sci. Eng. 1987, 96:231.
27. Dutta I., Sims J.D., Seigenthaler D.M. Acta Metall. Mater. 1993, 41:885.
28. Sørensen N.J., Suresh S., Tvergaard V., Needleman A. Mater. Sci. Eng. A 1995, 197:1.
29. Kim K.S., Huh S.H., Suganuma K. Mater. Sci. Eng. A 2002, 333:106.
30. Pang J.H.L., Xiong B.S. IEEE Trans. Comp. Packag. Technol. 2005, 28:830.