InP dies transferred onto silicon substrate for optical interconnects application

Sensors and Actuators, A: Physical

Volumn 125, Issue 2, 2006, Pages 411-414

  Kostrzewa, M ^a   Di Cioccio, L ^a   Zussy, M ^a   Roussin, J C ^a   Fedeli, J M ^a,d   Kernevez, N ^a,e,f   Regreny, P ^b   Lagahe Blanchard, Ch ^c   Aspar, B ^c  

^a CEA LETI   (France)

^b ECOLE CENTRALE DE LYON   (France)

^c TRACIT Technologies   (France)

^d Egypt

^e LETI   (Tunisia)

^f PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

Molecular bonding; Optical interconnects; Semiconductor materials

Indexed keywords

INASP QUANTUM WELL STACKS; INTEGRATED SENSORS; METALLIC ADHESIVES; MOLECULAR BONDING;

ADHESIVES; BONDING; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; DIES; ETCHING; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; SENSORS; SILICON WAFERS; WSI CIRCUITS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 29144506022     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.07.023     Document Type: Article

References (16)

1. D.A.B. Miller Physical reasons for optical interconnection Int. J. Optoelectron. 11 1997 155 168
2. D.A.B. Miller Optical interconnects to silicon IEEE J. Select. Top. Quant. Electron. 6 6 2000
3. I. O'Connor, and F. Gaffiot E. Macii On-Chip Optical Interconnect for Low-power in Ultra Low-Power Electronics and Design 2004 Kluwer
4. A.V. Krishnamoorthy, and K.W. Goossen Optoelectronic-VLSI: photonics integrated with VLSI circuits IEEE J. Select. Top. Quant. Electron. 4 6 1998
5. H. Takahara Optoelectronic multichip module packaging technologies and optical input/output interface chip-level packages for the next generation of hardware systems IEEE J. Select. Top. Quant. Electron. 9 2 2003 443 451
6. G. Roelkens, D. Van Thourhout, and R. Baets Ultra-thin benzocyclobutene bonding of III-V dies onto SOI substrate Electron. Lett. 41 9 2005 65 66
7. I. Christiaens, G. Roelkens, K. De Mesel, D. Van Thourhout, and R. Baets Thin-film devices fabricated with benzocyclobutene adhesive wafer bonding J. Lightwave Technol. 23 2 2005 517 523
8. H.C. Lin, K.L. Chang, G.W. Pickrell, K.C. Hsieh, and K.Y. Cheng Low temperature wafer bonding by spin on glass J. Vac. Sci. Technol. B 20 2 2002 752 754
9. E. Jalaguier, B. Aspar, S. Pocas, J.F. Michaud, M. Zussy, A.M. Papon, and M. Bruel Transfer of 3 in. GaAs film on silicon substrate by proton implantation process Electron. Lett. 34 4 1998 408 409
10. E. Jalaguier, L. Di Cioccio, M. Kostrzewa, M. Zussy, P. Perreau, S. Pocas, N. Kernevez, C. Seassal, P. Regreny, P. Rojo-Romeo, M.P. Besland, J.L. Leclercq, G. Grenet, G. Hollinger, O. Marty, J.M. Chatelanaz, and X. Wallaert III-V layers transfer onto silicon and applications Proceedings of the ICAST 2004 Chamonix, France 2004
11. M. Kostrzewa, L. Di Cioccio, M. Zussy, J.C. Roussin, J.M. Fedeli, N. Kernevez, and P. Regreny Die-to-wafer molecular bonding for optical interconnects and packaging Proceedings of the 15th European Microelectronics and Packaging Conference and Exhibition Brugge, Belgium 2005
12. R. Stengl, T. Tan, and U. Gosele A model for the silicon wafer bonding process Jpn. J. Appl. Phys. 28 1989 1735
13. U. Gösele, Y. Blum, G. Kästner, P. Kopperschmidt, G. Kräuter, R. Scholz, A. Schumacher, St. Senz, Q.-Y. Tong, L.-J. Huang, Y.-L. Chao, and T.H. Lee Fundamental issues in wafer bonding J. Vac. Sci. Technol. A17 4 1999
14. M. Kostrzewa, P. Regreny, M.P. Besland, J.L. Leclercq, G. Grenet, P. Rojo-Romeo, G. Hollinger, E. Jalaguier, P. Perreau, H. Moriceau, and O. Marty High quality epitaxial growth on new InP/Si substrate Proceedings of the IPRM 2003 Santa Barbara, USA 2003
15. B. Biasse, M. Zussy, B. Giffard, B. Aspar, M. Bruel, Transfert de circuits SOI sur substrat transparent par adhésion moléculaire, VII Journées Nationales de Microélectronique et Optoélectronique, Egat, France, 1999.
16. H. Moriceau, F. Fournel, O. Rayssac, A. Soubie, B. Bataillou, and B. Aspar Overview on some recent advances in wafer bonding technologies Proceedings of the Sixth International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, ECS Proc. PV 2001-27 2001