Wide band gap amorphous silicon thin films prepared by chemical annealing

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 812-818

  Futako, Wataru ^a   Yoshino, Kunihiko ^a   Fortmann, Charles M ^a   Shimizu, Isamu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35848950982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369165     Document Type: Article

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