Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1333-1339

  Futako, Wataru ^a   Takeoka, Shinya ^a   Fortmann, Charles M ^a   Shimizu, Isamu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001326390     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368202     Document Type: Article

References (28)

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