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Volumn 106, Issue 11, 2011, Pages

Metallic transport in a monatomic layer of in on a silicon surface

(7) Yamazaki, Shiro a,b Hosomura, Yoshikazu a Matsuda, Iwao a Hobara, Rei a Eguchi, Toyoaki a Hasegawa, Yukio a Hasegawa, Shuji a

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF HAMBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSON LOCALIZATION; CARRIER LOCALIZATION; CRYOGENIC TEMPERATURES; HOPPING CONDUCTION; METALLIC TEMPERATURE DEPENDENCE; METALLIC TRANSPORT; MICRO-FOUR-POINT PROBES; MINIMUM METALLIC CONDUCTIVITY; MONATOMIC LAYER; SI (1 1 1); SILICON SURFACES;

GRAPHENE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMOELECTRICITY;

SURFACE DEFECTS;

EID: 79952594679 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.106.116802 Document Type: Article

Times cited : (54)

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