Structure-dependent electrical conduction through indium atomic layers on the Si (111) surface

Surface Science

Volumn 415, Issue 3, 1998, Pages 264-273

  Takeda, Sakura ^a   Tong, Xiao ^a,b   Ino, Shozo ^a,c   Hasegawa, Shuji ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c UTSUNOMIYA UNIVERSITY   (Japan)

Author keywords

Electrical transport measurements; Epitaxy; Indium; Metallic films; Metallic surfaces; Silicon; Surface electrical transport (surface conductivity, surface recombination, etc.); Surface structure, morphology, roughness, and topography

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; EPITAXIAL GROWTH; IRIDIUM; METALLIC FILMS; MORPHOLOGY; SEMICONDUCTING SILICON; SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL TRANSPORT MEASUREMENT; METALLIC SURFACES; SURFACE ELECTRICAL TRANSPORT;

SURFACES;

EID: 0032500395     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00473-7     Document Type: Article

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