Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

Journal of Crystal Growth

Volumn 320, Issue 1, 2011, Pages 28-31

  Dartsch, Heiko ^a   Tessarek, Christian ^a   Aschenbrenner, Timo ^a   Figge, Stephan ^a   Kruse, Carsten ^a   Schowalter, Marco ^a   Rosenauer, Andreas ^a   Hommel, Detlef ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

A1. Electroluminescence; A3. MOVPE; A3. Quantum dots; B2. AlInN; B2. InGaN; B3. Single photon emitter

Indexed keywords

A1. ELECTROLUMINESCENCE; A3. MOVPE; B2. ALINN; B2. INGAN; B3. SINGLE PHOTON EMITTER; QUANTUM DOT;

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT TRANSMISSION; PARTICLE BEAMS; PHOTONS; REFLECTION; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL WAVEGUIDES;

EID: 79952535721     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.008     Document Type: Article

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