Optical properties of InGaN quantum dots in monolithic pillar microcavities

Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

  Sebald, K ^a   Seyfried, M ^a   Kalden, J ^a   Gutowski, J ^a   Dartsch, H ^a   Tessarek, C ^a   Aschenbrenner, T ^a   Figge, S ^a   Kruse, C ^a   Hommel, D ^a   Florian, M ^a   Jahnke, F ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INGAN QUANTUM DOTS; METALORGANIC VAPOR PHASE EPITAXY; MICROPHOTOLUMINESCENCE; PILLAR MICROCAVITY; QUALITY FACTORS; SHARP EMISSION; THEORETICAL CALCULATIONS; TRANSVERSAL MODES;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROCAVITIES; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; TRANSFER MATRIX METHOD;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77954068155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3456376     Document Type: Article

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