Tunnel magnetoresistance above 170% and resistance-area product of 1ω(μm)2 attained by in situ annealing of ultra-thin MgO tunnel barrier

Applied Physics Express

Volumn 4, Issue 3, 2011, Pages

  Maehara, Hiroki ^a,b,c   Nishimura, Kazumasa ^a,c   Nagamine, Yoshinori ^a,c   Tsunekawa, Koji ^a,c   Seki, Takayuki ^b,d   Kubota, Hitoshi ^b,c   Fukushima, Akio ^b,c   Yakushiji, Kay ^b,c   Ando, Koji ^b   Yuasa, Shinji ^b,c  

^a Canon ANELVA Corporation ^*  (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HARD DISK DRIVE; HIGHLY SENSITIVE; IN-SITU ANNEALING; LOW RESISTANCE; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE RATIO; MAGNETORESISTIVE; MGO BARRIER; MR RATIO; RA PRODUCT; READ HEADS; RECORDING DENSITY; RESISTANCE-AREA PRODUCTS; SPUTTERING DEPOSITION; TUNNEL BARRIER; TUNNEL MAGNETORESISTANCE; ULTRA-THIN;

ANNEALING; ELECTRIC RESISTANCE; HARD DISK STORAGE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 79952529172     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.033002     Document Type: Article

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