A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Volumn , Issue , 2010, Pages

  Guo, Xinjie ^a   Wang, Shaodi ^a   Ma, Chenyue ^a   Zhang, Chenfei ^a   Lin, Xinnan ^a   Wu, Wen ^a   He, Frank ^a   Wang, Wenping ^a   Liu, Zhiwei ^a   Zhao, Wei ^a   Yang, Shengqi ^b  

^a PEKING UNIVERSITY   (China)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

3 D numerical simulation; Fin width LER; FinFETs; Intrinsic parameter fluctuation

Indexed keywords

3-D NUMERICAL SIMULATION; FIN-WIDTH LER; FINFETS; INTRINSIC PARAMETER FLUCTUATION; LINE EDGE ROUGHNESS; LOW DRAIN VOLTAGES; MATLAB PROGRAM; SHIFT-AND; SIMULATION EXPERIMENTS; SIMULATION RESULT; STATISTICAL SIMULATION; VELOCITY SATURATION EFFECT;

FINS (HEAT EXCHANGE); INTEGRATED CIRCUITS; SOLID STATE DEVICES; THREE DIMENSIONAL;

ROUGHNESS MEASUREMENT;

EID: 79952516165     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2010.5713678     Document Type: Conference Paper

References (8)

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