A simple compact model for hot carrier injection phenomenon in 32 nm NAND flash memory device

2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Volumn , Issue , 2010, Pages

  Kang, Myounggon ^a,b   Hahn, Wookghee ^b   Park, Il Han ^b   Lee, Hocheol ^b   Park, Juyoung ^b   Song, Youngsun ^b   Eun, Changgyu ^b   Ju, Sanghyun ^b   Choi, Kihwan ^b   Lim, Youngho ^b   Lee, Jong Ho ^a   Park, Byung Gook ^a   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT MODEL; COMPLEX PROBLEMS; HIGH DENSITY; HOT CARRIER INJECTION; MEASUREMENT RESULTS; MULTILEVEL CELL; NAND FLASH; NAND FLASH MEMORY; PROGRAM DISTURBANCE; SHORT-CHANNEL DEVICES; SIMULATION-BASED;

CIRCUIT SIMULATION; FIELD EFFECT TRANSISTORS; HOT CARRIERS; NAND CIRCUITS; SOLID STATE DEVICES;

FLASH MEMORY;

EID: 79952513948     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2010.5713695     Document Type: Conference Paper

References (11)

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