Ab initio comparative study of zincblende and wurtzite ZnO

Chinese Physics Letters

Volumn 24, Issue 4, 2007, Pages 1032-1034

  Zhang, Xin Yu ^a   Chen, Zhou Wen ^a   Qi, Yan Peng ^a   Feng, Yan ^a   Zhao, Liang ^a   Qi, Li ^a   Ma, Ming Zhen ^a   Liu, Ri Ping ^a   Wang, Wen Kui ^a  

^a YANSHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISSIPATION; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTING ZINC COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

AB INITIO; COMPARATIVES STUDIES; DIRECT-GAP SEMICONDUCTOR; ELECTRON EFFECTIVE MASS; FIRST PRINCIPLES; PRESSURE COEFFICIENTS; PSEUDOPOTENTIAL PLANE-WAVE METHOD; SMALL BANDGAP; STATIC DIELECTRIC CONSTANTS; WURTZITE STRUCTURE;

ZINC SULFIDE;

EID: 34247142487     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/4/051     Document Type: Article

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