First-principles calculation of electronic structure and optical properties of Sb-doped ZnO

Chinese Physics Letters

Volumn 25, Issue 10, 2008, Pages 3735-3738

  Zhang, Fu Chun ^a,b   Zhang, Zhi Yong ^c   Zhang, Wei Hu ^a,b   Yan, Jun Feng ^c   Yun, Jiang Ni ^c  

^a XI AN INSTITUTE OF OPTICS AND PRECISION MECHANICS   (China)

^b YAN'AN UNIVERSITY   (China)

^c NORTHWEST UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZINC SULFIDE;

DOPED ZNO; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; ELECTRONIC.STRUCTURE; FIRST PRINCIPLE CALCULATIONS; FORMATION ENERGIES; GEOMETRIC STRUCTURE; OXYGEN SITE; P-TYPE; SB-DOPED; WURTZITE STRUCTURE;

II-VI SEMICONDUCTORS;

EID: 56349131361     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/10/059     Document Type: Article

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