An almost transparent image pixel with a pentacene/ZnO photodiode, a pentacene thin-film transistor, and a 6,13-pentacenequinone phosphor layer

Advanced Materials

Volumn 23, Issue 10, 2011, Pages 1231-1236

  Lee, Kwang H ^a   Lee, Hee Sung ^a   Lee, Kimoon ^b   Ha, Taewoo ^a   Kim, Jae Hoon ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

6,13 pentacenequinone; image pixels; pentacene; ZnO

Indexed keywords

6,13-PENTACENEQUINONE; IMAGE PIXELS; LIGHT DETECTION; PENTACENE; PENTACENE THIN-FILM TRANSISTORS; PHOSPHOR LAYERS; UV ILLUMINATIONS; ZNO;

LIGHT EMISSION; PHOSPHORS; PHOTODIODES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC OXIDE;

PIXELS;

6,13 PENTACENEQUINONE; 6,13-PENTACENEQUINONE; NAPHTHACENE DERIVATIVE; PENTACENE; QUINONE DERIVATIVE; ZINC OXIDE;

ARTICLE; CHEMISTRY; LIGHT; QUANTUM THEORY; SEMICONDUCTOR;

LIGHT; NAPHTHACENES; QUANTUM THEORY; QUINONES; TRANSISTORS, ELECTRONIC; ZINC OXIDE;

EID: 79952422040     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201003646     Document Type: Article

References (18)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature 2004, 432, 488.
2. H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dötz, M. Kastler, A. Facchetti, Nature 2009, 457, 679.
3. L. Zhou, S. Park, B. Bai, J. Sun, S.-C. Wu, T. N. Jackson, S. Nelson, D. Freeman, Y. Hong, IEEE Electron Device Lett. 2005, 26, 640.
4. B. N. Pal, J. Sun, B. J. Jung, E. Choi, A. G. Andreou, H. E. Katz, Adv. Mater. 2008, 20, 1023.
5. S. H. K. Park, C. S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. I. Lee, K. Lee, M. S. Oh, S. Im, Adv. Mater. 2009, 21, 678.
6. M. S. Oh, K. Lee, K. H. Lee, S. H. Cha, J. M. Choi, B. H. Lee, M. M. Sung, S. Im, Adv. Funct. Mater. 2009, 19, 726.
7. C. H. Park, S. Im, J. Yun, G. H. Lee, B. H. Lee, M. M. Sung, Appl. Phys. Lett. 2009, 95, 223506.
8. J.-M. Choi, J. Lee, D. K. Hwang, J. H. Kim, S. Im, E. Kim, Appl. Phys. Lett. 2006, 88, 043508.
9. T. Someya, Y. Kato, S. Iba, Y. Noguchi, T. Sekitani, H. Kawaguchi, T. Sakurai, IEEE Trans. Electron Devices 2005, 52, 2501.
10. S. Aihara, H. Seo, M. Namba, T. Watabe, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, M. Furuta, H. Nitta, Takashi Hirao, IEEE Trans. Electron Devices 2009, 56, 2570.
11. J. Lee, S. S. Kim, K. Kim, J. H. Kim, S. Im, Appl. Phys. Lett. 2004, 84, 1701.
12. R. A. Street, in Technology and Applications of Amorphous Silicon, (Ed:, R. A. Street,), Springer, New York 2000, Ch. 4, pp. 160.
13. T. N. Ng, R. A. Lujan, S. Sambandan, R. A. Street, S. Limb, W. S. Wong, Appl. Phys. Lett. 2007, 91, 063505.
14. J.-M. Choi, D. K. Hwang, J. H. Kim, S. Im, Appl. Phys. Lett. 2005, 86, 123505.
15. D. K. Hwang, K. Kim, J. H. Kim, S. Im, D.-Y. Jung, E. Kim, Appl. Phys. Lett. 2004, 85, 5568.
16. I.-S. Jeong, J. H. Kim, S. Im, Appl. Phys. Lett. 2003, 83, 2946.
17. R. A. Street, S. E. Ready, K. V. Schuylenbergh, J. Ho, J. B. Boyce, P. Nylen, K. Shah, L. Melekhov, H. Hermon, J. Appl. Phys. 2002, 91, 3345.
18. Y. E.-Mohri, L. E. Antonuk, M. Koniczek, Q. Zhao, Y. Li, R. A. Street, J.-P. Lu, Med. Phys. 2009, 36, 3340.