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Volumn 98, Issue 9, 2011, Pages

Microstructures corresponding to multilevel resistances of In3 Sb1 Te2 phase-change memory

Author keywords

[No Author keywords available]

Indexed keywords

FOUR-ORDER; PHASE CHANGES; PHASE-CHANGE RANDOM ACCESS MEMORY; TEM; VOLUME CHANGE;

EID: 79952417606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3562024     Document Type: Article
Times cited : (33)

References (12)
  • 6
    • 0035978771 scopus 로고    scopus 로고
    • Materials aspects in phase change optical recording
    • DOI 10.1016/S0921-5093(00)01448-9, PII S0921509300014489
    • G. -F. Zhou, Mater. Sci. Eng., A 0921-5093 304-306, 73 (2001). 10.1016/S0921-5093(00)01448-9 (Pubitemid 32459348)
    • (2001) Materials Science and Engineering A , vol.304-306 , Issue.1-2 , pp. 73-80
    • Zhou, G.-F.1
  • 8
    • 35748985544 scopus 로고    scopus 로고
    • Phase-change materials for rewriteable data storage
    • DOI 10.1038/nmat2009, PII NMAT2009
    • M. Wuttig and N. Yamada, Nature Mater. 1476-1122 6, 824 (2007). 10.1038/nmat2009 (Pubitemid 350050578)
    • (2007) Nature Materials , vol.6 , Issue.11 , pp. 824-832
    • Wuttig, M.1    Yamada, N.2
  • 12
    • 0003998388 scopus 로고
    • 72nd ed., edited by D. R. Lide (CRC, Boca Raton)
    • Handbook of Chemistry and Physics, 72nd ed., edited by, D. R. Lide, (CRC, Boca Raton, 1991).
    • (1991) Handbook of Chemistry and Physics


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.