SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 2, 2011, Pages

Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature

(5) Howlader, M M R a Zhang, F a Deen, M J a Suga, T b Yamauchi, A c

a MCMASTER UNIVERSITY (Canada)

b UNIVERSITY OF TOKYO (Japan)

c Bondtech Co Ltd (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT ACCURACY; AU BUMP; BONDED INTERFACE; BONDING FORCES; ELECTRICAL RESISTANCES; EXTERNAL FORCE; FAST ATOM BEAMS; GOLD STUD BUMP; LOW COSTS; MINIATURIZED SYSTEMS; PULLING TEST; ROOM TEMPERATURE; STUD-BUMPS; SURFACE ACTIVATED BONDING; THROUGH SILICON VIAS; VERTICAL INTEGRATION;

ARGON; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; DEFORMATION; ELECTRIC RESISTANCE; GOLD; GOLD METALLOGRAPHY; HEATING; METAL CLADDING; STUDS (FASTENERS); STUDS (STRUCTURAL MEMBERS); SURFACE ROUGHNESS;

SURFACE MORPHOLOGY;

EID: 79952382464 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3549114 Document Type: Article

Times cited : (8)

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