Experimental characterization of roughness induced scattering losses in PECVD SiC waveguides

Journal of Lightwave Technology

Volumn 29, Issue 5, 2011, Pages 744-749

  Pandraud, Grégory ^a   Margallo Balbas, Eduardo ^b   Yang, Chung Kai ^c   French, Paddy J ^c  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Medlumics SL   (Spain)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Loss measurement; optical waveguides; scattering

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; AUTOMATED ALGORITHMS; CHIP-LEVEL; EXPERIMENTAL CHARACTERIZATION; LOSS MEASUREMENT; LOW LOSS; PECVD SIC; PROBE CONTACT; RIB WAVEGUIDES; SCATTERING LOSS; SIDEWALL ROUGHNESS; SILICON WAVEGUIDE; SMOOTHING PROCESS; THERMAL OXIDATION; TRANSMISSION LOSS; VERTICAL WALL;

OPTICAL WAVEGUIDES; SCATTERING; SILICON CARBIDE; SILICON OXIDES; WAVEGUIDES;

ELECTRIC LOSSES;

EID: 79952121278     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2011.2108264     Document Type: Article

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