Side-wall roughness in SOI rib waveguides fabricated by inductively coupled plasma reactive ion etching

Applied Physics B: Lasers and Optics

Volumn 79, Issue 7, 2004, Pages 879-881

  Wang, Y ^a   Lin, Z ^a   Zhang, J ^a,b   Cheng, X ^a   Zhang, F ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ETCHING; HYDROGEN; INDUCTIVELY COUPLED PLASMA; PARAMETER ESTIMATION; SURFACE ROUGHNESS; WAVEGUIDES;

HYDROGEN ANNEALING; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING (ICPRIE); ION ETCHING; RIB WAVEGUIDES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 10644275324     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-004-1648-6     Document Type: Article

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