Semiclassical and quantum transport in CNTFETs using Monte Carlo simulation

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 798-804

  Nguyen, Huu Nha ^a   Querlioz, Damien ^a   Galdin Retailleau, Sylvie ^a   Dollfus, Philippe ^a  

^a CNRS   (France)

Author keywords

Carbon nanotube (CNT); Monte Carlo (MC) method; quantum transport; transistor; Wigner function (WF)

Indexed keywords

BALLISTIC ELECTRONS; BALLISTICITY; BOLTZMANN; BOLTZMANN FUNCTION; CARBON NANOTUBE FET; GATE LENGTH; GATE VOLTAGES; HIGH ENERGY; MONTE CARLO; MONTE CARLO SIMULATION; OFF-CURRENT; POTENTIAL DROP; QUANTUM CURRENTS; QUANTUM SIMULATIONS; QUANTUM TRANSPORT; QUASI-BALLISTIC; SEMICLASSICAL AND QUANTUM TRANSPORT; SEMICLASSICAL SIMULATION; SOURCE-DRAIN; SUBTHRESHOLD; SUBTHRESHOLD SLOPE; UNDOPED CHANNELS; WIGNER FUNCTIONS;

BALLISTICS; CARBON NANOTUBES; COMPUTER SIMULATION; MESFET DEVICES; MONTE CARLO METHODS; PHONONS; QUANTUM ELECTRONICS; WAVE FUNCTIONS;

QUANTUM CHEMISTRY;

EID: 79952040662     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2096820     Document Type: Article

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