Stochastic interpretation of the Wigner transport in nanostructures

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 443-445

  Nedjalkov, M ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Monte Carlo algorithm; Stochastic interpretation; Wigner

Indexed keywords

BOUNDARY CONDITIONS; MONTE CARLO METHODS; QUANTUM THEORY;

WIGNER TRANSPORT;

NANOSTRUCTURED MATERIALS;

EID: 0037567415     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00069-7     Document Type: Conference Paper

References (4)

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2. Kosina H., Nedjalkov M., Selberherr S. Theory of the Monte Carlo method for semiconductor device simulation. IEEE Transaction on Electron Devices. 47:(10):2000;1898-1908.
3. Schmidt T., Moehring K. Stochastic path-integral simulation of quantum scattering. Physical Review A. 48:(5):1993;R3418-R3420.
4. Jensen K., Buot F. The methodology of simulating particle trajectories trough tunneling structures using a Wigner distribution approach. IEEE Transactions on Electron Devices. 38:(10):1991;2337-2347.