A new approach for measuring P-N junction depth of textured silicon solar cells

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2009, Pages 616-618

  Wu, W ^a   Li, P R ^a   Zhang, L ^a   Li, J ^a   Wang, Y F ^a   Ma, Z Q ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DATA; JUNCTION DEPTH; MEASUREMENT TECHNIQUES; NEW APPROACHES; P-N JUNCTION DEPTH;

INTEGRATED CIRCUITS; PHOTOVOLTAIC CELLS; QUALITY ASSURANCE; SAFETY FACTOR; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; SOLAR CELLS;

FAILURE ANALYSIS;

EID: 71049130305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2009.5232569     Document Type: Conference Paper

References (3)

1. Hulenyi, L. and Kinder, R. "Some Possibilities for Determining the Depth of the p-n Junction and Profiles of Semiconductor Layers." ASDAM, 2002, Oct. 14-16, 2002 pp.lll.
2. A Boudjani, B Sieber and L Boudjani. "EBIC determination of lateral dopant diffusion and junction depth in planar devices, " Semicond. Sci. Technol. 10 1995, p. 1151.
3. W. R. Runyan, T. J. Shaffner, Semiconductor Measurements and Instrumentation, 2nd Ed. McGraw-Hill, New York, 1998.