In-situ measurement of curvature and mechanical stress of packaged silicon

Proceedings of IEEE Sensors

Volumn , Issue , 2010, Pages 2563-2568

  Husstedt, Hendrik ^a   Ausserlechner, Udo ^b   Kaltenbacher, Manfred ^a  

^a UNIVERSITY OF KLAGENFURT   (Austria)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DIE SURFACE; HALL ELEMENTS; HALL PLATES; IN-SITU; IN-SITU MEASUREMENT; MAGNETIC SENSITIVITY; MECHANICAL BEHAVIOR; MECHANICAL STRESS; PIEZORESISTIVE EFFECTS; SILICON DIE; STRESS AND STRAIN; TEST CHIPS;

DIES; MAGNETIC FIELDS; SENSORS;

STRESSES;

EID: 79951903175     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2010.5690142     Document Type: Conference Paper

References (18)

1. S. Fischer, S. Hartwig, J. Wilde, H. Beyer, and R. Janke, "Analysis of the influence of packaging stresses on the accuracy of hall sensor ics," in SENSOR 2005 Proceedings, Volume II, 2005.
2. E. Stellrecht, B. Han, and M. Pecht, "Characterization of hygroscopic swelling behavior of mold compounds and plastic packages," IEEE Transactions on Components and Packaging Technologies, vol. 27, pp. 499-506, 2004.
3. M. Pecht, L. T. Nguyen, and E. B. Hakim, Eds., Plastic Encapsulated Microelectronics. John Wiley & Sons, 1995.
4. TLE4941: Differential Two-Wire Hall Effect Sensor-IC for Wheel Speed Applications, Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany, 2004.
5. TLE5011: Angle Sensor, Preliminary Data Sheet V0.91, Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany, 2009.
6. M. Hackner, H.-P. Hohe, and M. Stahl-Offergeld, "An integrated nine-dimensional hall-gradient-sensor," in SENSOR 2009 Proceedings, Volume II, 2009.
7. J. N. Sweet, D. W. Peterson, and J. A. Emerson, "Liquid encapsulant and uniaxial calibration mechanical stress measurement with the atc04 assembly test chip," in Electronic Components and Technology Conference, 1994.
8. H. Kittel, S. Endler, F. Schindler-Saefkow, H. Osterwinter, and S. Oesterle, "Novel stress measurement system for evaluation of package induced stress," in Smart Systems Integration 2008, 2008.
9. U. Ausserlechner, M. Motz, and M. Holliber, "Drift of magnetic sensitivity of smart hall sensors due to moisture absorbed by the ic-package [automotive applications]," Proceedings of IEEE Sensors, vol. 1, pp. 455-458, 2004.
10. R. S. Popovic, Hall effect devices, 2nd ed., B. E. Jones, Ed. Institute of Physics Publishing, 2004.
11. Rotary Stages DT 105, Feinmess Dresden GmbH, Fritz Schreiter Str. 32, 01259 Dresden, Germany.
12. B. K. P. Horn, "Closed-form solution of absolute orientation using unit quaternions," Journal of the Optical Society of America, vol. 4, pp. 629-642, 1987.
13. Force Sensor KD24S - 100N, ME-Messsysteme GmbH, Neuendorfstr. 18a, 16761 Hennigsdorf, Germany.
14. C. Djelassi, H. Koeck, and M. Glavanovics, "Comparison of two calibration methods for a package stress measurement testchip," in Reliability Physics Symposium (IRPS), 2010 IEEE International, 2010.
15. S. G. Taranov, V. V. Braiko, A. D. Nizhensky, V. P. Belousov, D. V. Kovalchuk, I. P. Grinberg, E. E. Laschuk, J. M. Panchishin, and J. T. Chigirin, "Method of and apparatus for eliminating the effect of non-equipotentiality voltage on the hall voltage," USA Patent 4 037 150, 1977.
16. U. Ausserlechner, "Limits of offset cancellation by the principle of spinning current hall probe," Sensors, 2004. Proceedings of IEEE, vol. 3, pp. 1117-1120, 2004.
17. B. Hälg, "Piezo-hall coefficients of n-type silicon," Journal of Applied Physics, vol. 64, pp. 276-282, 1988.
18. U. Ausserlechner, "The piezo-hall effect in n-silicon for arbitrary crystal orientation," Proceedings of IEEE Sensors, vol. 3, pp. 1149-1152, 2004.