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Volumn , Issue , 2010, Pages 446-452

Comparison of two calibration methods for a package stress measurement testchip

Author keywords

Beam bending calibration; CMOS stress sensor; Package stress; Silicon stress measurement

Indexed keywords

BEAM BENDING CALIBRATION; CALIBRATION METHOD; CMOS STRESS SENSOR; CMOS TRANSISTORS; ELECTRICAL PARAMETER; INTEGRATED DEVICE; METAL OXIDE SEMICONDUCTOR; MOS TRANSISTORS; ON CHIPS; PACKAGE STRESS; SEMICONDUCTOR PROCESS; STRESS SENSITIVE; STRESS-DEPENDENT; TEST-CHIP; THERMO-MECHANICAL STRESS; TRANSISTOR STRUCTURE;

EID: 77957911291     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488788     Document Type: Conference Paper
Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.