The piezo-Hall effect in n-silicon for arbitrary crystal orientation

Proceedings of IEEE Sensors

Volumn 3, Issue , 2004, Pages 1149-1152

  Udo, Ausserlechner ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Mechanical stress on integrated Hall probes; Package drift; Piezo Hall effect

Indexed keywords

CRYSTAL ORIENTATION; HALL EFFECT; SEMICONDUCTOR DOPING; STRESS ANALYSIS;

HALL COEFFICIENT; PIEZO-HALL EFFECTS; WAFER ORIENTATION;

SEMICONDUCTING SILICON;

EID: 27944494014     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. P. J. A. Munter, "A low-offset spinning -current Hall plate", Sensors and Actuators A (Physical), vol. A22, nr. 1-3, p. 743-746, 1990.
2. B. Hälg, "Piezo-Hall coefficients of n-type silicon", J. Appl. Phys., vol. 64, nr. 1, p. 276-282, 1988.
3. Y. Kanda, K. Suzuki, "The Piezo-Hall Effect in n-Silicon", 22nd Int'l Conf. on the Physics of Semiconductors, vol. 1, p. 89-92, 1995.
4. J. F. Nye, Physical Properties of Crystals, 1985 ed., Oxford Science Publications, Clarendon Press, Oxford, chapter VIII, §1: "Hooke's Law", p. 133, eq. (3).
5. K. Matsuda, K. Suzuki, K. Yamamura, Y. Kanda, "Nonlinear piezoresistance effects in silicon", J. Appl. Phys., vol. 73, no. 4, 15 Feb. 1993, pp 1838-1847, cf. reference 11.
6. D. A. Bittle, J. C. Suhling, R. E. Beaty, R. C. Jaeger, R. W. Johnson, "Piezoresistive Stress Sensors for Structural Analysis of Electronic Packages", J. Electron. Packaging, vol. 113, p. 203-215, (9) 1991.
7. Yozo Kanda, "A Graphical Representation of the Piezoresistive Coefficients in Silicon", IEEE Tran. Electron. Devices, vol. ED-29, no. 1, pp. 64-70, Jan. 1982