Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content

18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010

Volumn , Issue , 2010, Pages 62-65

  Rosseel, Erik ^a   Hikavyy, Andriy ^a   Everaert, Jean Luc ^a   Witters, Liesbeth ^a   Mitard, Jerome ^a   Hoffmann, Thomas ^a   Vandervorst, Wilfried ^a,b   Pap, A ^c   Pavelka, T ^c  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

^c SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; GE CONCENTRATIONS; GE CONTENT; HIGH-RESOLUTION X-RAY DIFFRACTION; INVERSION CHARGE; LASER ANNEAL; MOBILITY ENHANCEMENT; NON-CONTACT METROLOGY; PEAK TEMPERATURES; SIGE CHANNELS; SIGE/SI; SUB-MELT LASER ANNEALING; THERMAL BUDGET;

BUDGET CONTROL; GERMANIUM; RAPID THERMAL ANNEALING; X RAY DIFFRACTION;

SEMICONDUCTOR LASERS;

EID: 78650472278     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2010.5623604     Document Type: Conference Paper

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