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Applied Physics Letters

Volumn 98, Issue 6, 2011, Pages

The enhanced binding energy for biexcitons in InAs quantum dots

(5) Masumoto, Yasuaki a Yoshida, Seitaro a Ikezawa, Michio a Tomimoto, Shinichi a Sakuma, Yoshiki b

a UNIVERSITY OF TSUKUBA (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-EXCITONS; BIEXCITON; BIEXCITON BINDING ENERGY; CONFINED GEOMETRIES; ELECTRON HOLE; INAS; INAS QUANTUM DOTS; PHOTON ECHO DECAY; QUANTUM BEAT; STRAIN DISTRIBUTIONS; TELECOMMUNICATION WAVELENGTHS;

EXCITONS; FOUR WAVE MIXING; INDIUM ARSENIDE; MONOLAYERS; NUCLEAR ENERGY; PHOTONS; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

BINDING ENERGY;

EID: 79951802700 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3554425 Document Type: Article

Times cited : (9)

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