Study on fabrication method of forming-free resistance random access memory

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 546-548

  Yoda, Takatoshi ^a   Kinoshia, Kentaro ^a   Makino, Tatsuya ^a   Dobashi, Kazufumi ^a   Kishida, Satoru ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

Forming; NiO; Reset current; Resistive random access memory (ReRAM)

Indexed keywords

BOTTOM ELECTRODES; FABRICATION METHOD; FORMING PROCESS; GUIDING PRINCIPLES; HIGH-RESISTANCE STATE; INITIAL STATE; IV CHARACTERISTICS; LOW-RESISTANCE STATE; MEMORY CELL; MEMORY LAYERS; NIO; RESET CURRENT; RESET CURRENTS; RESISTANCE CHANGE EFFECTS; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY; SOFT BREAKDOWN; TOTAL RESISTANCE; TRANSITION-METAL OXIDES;

NONVOLATILE STORAGE; OXYGEN; OXYGEN VACANCIES; REACTIVE ION ETCHING; SEMICONDUCTOR STORAGE; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79951704474     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000600     Document Type: Article

References (10)

1. I. G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U-In Chung, J. T. Moon, and B. I. Ryu, Tech. Dig. Int. Electron Devices Meet. 2005, p. 769.
2. Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, and Y. Tokura, Tech.Dig. Int. Electron Devices Meet. 2006, p. 793.
3. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, Tech. Dig. Int. Electron Devices Meet. 2007, p. 767.
4. K. Fujiwara, T. Nemoto, M. J. Rozenberg, Y. Nakamura, and H. Takagi, Jpn. J. Appl. Phys. 47, 6266 (2008).
5. H. Shima, F. Takano, H. Muramatsu, M. Yamazaki, H. Akinaga, and A. Kogure, Phys. Status Solidi RRL 2, 99 (2008).
6. K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka, Appl. Phys. Lett. 89, 103509 (2006).
7. I.-S. Park, K.-R. Kim, S. Lee, and J. Ahn, Jpn. J. Appl. Phys. 46, 2172 (2007).
8. M. Kawai, K. Ito, and Y. Shimakawa, Appl. Phys. Lett. 95, 012109 (2009).
9. K. Kinoshita, H. Noshiro, C. Yoshida, Y. Sato, M. Aoki, and Y. Sugiyama, J. Mater. Res. 23, 812 (2008).
10. K. S. Kim and N. Winograd, Surf. Sci. 43, 625 (1974).