Negative differential resistance characteristics of nanoscale in-plane gate devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 408-410

  Komatsuzaki, Yuji ^a   Higashi, Kazuhiro ^a   Kyougoku, Tomoteru ^a   Onomitsu, Koji ^b   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

In plane gate device; InGaAs InAlAs; Negative differential resistance; Real space transfer

Indexed keywords

CHANNEL CONDUCTANCE; CHANNEL GEOMETRY; CHANNEL LENGTH; CHANNEL SHAPE; CHANNEL WIDTHS; DRAIN-SOURCE VOLTAGE; GATE VOLTAGES; HIGH MOBILITY CHANNELS; IN-PLANE GATES; INGAAS/INALAS; LOW MOBILITY; NANO SCALE; NANOSCALE DEVICE; NEGATIVE DIFFERENTIAL RESISTANCE; NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCES; ONSET VOLTAGES; REAL SPACE TRANSFER; REAL-SPACE TRANSFERS;

CYCLOTRONS; ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; NEGATIVE RESISTANCE; REACTIVE ION ETCHING;

EQUIPMENT;

EID: 79951698424     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000492     Document Type: Article

References (13)

1. D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, and H. S. P. Wong, Proc. IEEE 89, 259 (2001).
2. A. D. Wieck and K. Ploog, Appl. Phys. Lett. 56, 928 (1990).
3. J. Nieder, A. D. Wieck, P. Grambow, H. Lage, D. Heitmann, K. V. Klitzing, and K. Ploog, Appl. Phys. Lett. 57, 2695 (1990).
4. A. D. Wieck and K. Ploog, Appl. Phys. Lett. 61, 1048 (1992).
5. J. S. McLean, A. D. Wieck, M. Bleder, and K. Ploog, Appl. Phys. Lett. 61, 1324 (1992).
6. T. Müller, A. Lorke, Q. T. Do, F. J. Tegude, D. Schuh, and W. Wegscheider, Solid-State Electron. 49, 1990 (2005).
7. S. Reitzenstein, L. Worschech, C. R. Müller, and A. Forchel, IEEE Electron Device Lett. 26, 142 (2005).
8. C. R. Müller, L. Worschech, J. Heinrich, S. Höfling, and A. Forchel, Appl. Phys. Lett. 93, 063502 (2008).
9. A. Kastalsky, R. A. Kiehl, S. Luryi, A. C. Gossard, and R. Hendel, IEEE Electron Device Lett. 5, 321 (1984).
10. S. Luryi, P. M. Mensz, M. R. Pinto, P. A. Garbinski, A. Y. Cho, and D. L. Sivco, Appl. Phys. Lett. 57, 1787 (1990).
11. S. J. Kim, T. Sugaya, M. Ogura, and Y. Sugiyama, Jpn. J. Appl. Phys. 39, 6152 (2000).
12. T. Sugaya, K. Y. Jang, C. K. Hahn, M. Ogura, K. Komori, A. Shinoda, and K. Yonei, J. Appl. Phys. 97, 034507 (2005).
13. Y. Komatsuzaki, K. Higashi, T. Kyougoku, K. Onomitsu, and Y. Horikoshi, submitted to Jpn. J. Appl. Phys.