Negative differential resistance characteristics of nanoscale in-plane gate devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 408-410

  Komatsuzaki, Yuji ^a   Higashi, Kazuhiro ^a   Kyougoku, Tomoteru ^a   Onomitsu, Koji ^b   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

^b Bio Medical Informatics Research Center   (Japan)

Author keywords

In plane gate device; InGaAs InAlAs; Negative differential resistance; Real space transfer

Indexed keywords

CHANNEL CONDUCTANCE; CHANNEL GEOMETRY; CHANNEL LENGTH; CHANNEL SHAPE; CHANNEL WIDTHS; DRAIN-SOURCE VOLTAGE; GATE VOLTAGES; HIGH MOBILITY CHANNELS; IN-PLANE GATES; INGAAS/INALAS; LOW MOBILITY; NANO SCALE; NANOSCALE DEVICE; NEGATIVE DIFFERENTIAL RESISTANCE; NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCES; ONSET VOLTAGES; REAL SPACE TRANSFER; REAL-SPACE TRANSFERS;

CYCLOTRONS; ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; NEGATIVE RESISTANCE; REACTIVE ION ETCHING;

EQUIPMENT;

EID: 79951698424     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000492     Document Type: Article

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