A three-terminal planar selfgating device for nanoelectronic applications

Solid-State Electronics

Volumn 49, Issue 12, 2005, Pages 1990-1995

  Muller T ^a,b   Lorke, A ^a   Do, Q T ^a   Tegude, F J ^a   Schuh, D ^c   Wegscheider, W ^c  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

^c UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

Device simulation; In plane gates; Nanoelectronics; Planar in plane gate diode; Selfgating

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICES; SUPERFLUID HELIUM;

DEVICE SIMULATION; IN-PLANE GATES; NANOELECTRONICS; PLANAR IN-PLANE GATE DIODE; SELFGATING;

NANOTECHNOLOGY;

EID: 28044438203     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.09.004     Document Type: Article

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