Gate-length dependence of negative differential resistance in InGaAs/InAlAs quantum well field-effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6152-6156

  Kim, Seong Jin ^a,b,c   Sugaya, Takeyoshi ^a   Ogura, Mutsuo ^a   Sugiyama, Yoshinobu ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TUNNELING; LEAKAGE CURRENTS; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

GATE-LENGTH DEPENDENCE; NEGATIVE DIFFERENTIAL RESISTANCES (NDR);

GATES (TRANSISTOR);

EID: 0034316179     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6152     Document Type: Article

References (14)

1. A. Katalsky, R. A. Kiehl, S. Luryi, A. C. Gossard and R. Hendel: IEEE Electron Device Lett. 5 (1984) 321.
2. S. Luryi, P. M. Menze, M. R. Pinto, P. A. Garbinski, A. Y. Cho and D. L. Sivco: Appl. Phys. Lett. 57 (1990) 1787.
3. S. Luryi, A. Katalsky, A. C. Gossard and R. Hendel: Appl. Phys. Lett. 45 (1984) 1294.
4. P. M. Mensz, P. A. Garbinski, A. Y. Cho, D. L. Sivco and S. Luryi: Appl. Phys. Lett. 57 (1990) 2558.
5. T. K. Higman, M. S. Hagedorn, J. Chen and K. Y. Cheng: Appl. Phys. Lett. 60 (1992) 1342.
6. H. P. Zappe and C. Moglestue: J. Appl. Phys. 68 (1990) 2501.
7. Y. K. Chen, D. C. Radulescu, G. W. Wang, F. E. Najjar and L. F. Eastman: IEEE Electron Device Lett. 9 (1988) 1.
8. J. Laskar, A. A. Ketterson, J. N. Baillargeon, T. Brock, I. Adesida, K. Y. Cheng and J. Kolodzey: IEEE Electron Device Lett. 10 (1989) 528.
9. M. R. Hueschen, N. Moll and A. F. Colbrie: Appl. Phys. Lett. 29 (1990) 386.
10. C. L. Wu and W. C. Hsu: IEEE Trans. Electron Devices 43 (1996) 207.
11. L. D. Nguyen, A. S. Brown, M. A. Thompson and L. M. Jelloian: IEEE Trans. Electron Devices 39 (1992) 2007.
12. S. J. Kim, T. Sugaya, M. Ogura, Y. Sugiyama and T. Tomizawa: Physica B 272 (1999) 117.
13. K. Hess, H. Morkoc, H. Shichijo and B. G. Streetman: Appl. Phys. Lett. 35 (1976) 469.
14. A. Ghosal, D. Chattopadhyay and N. N. Purkait: Appl. Phys. Lett. 44 (1984) 773.