Enhanced peak-to-valley current ratio in InGaAs/InAlAs trench-type quantum-wire negative differential resistance field-effect transistors

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Sugaya, Takeyoshi ^a   Jang, Kee Youn ^a   Hahn, Cheol Koo ^a   Ogura, Mutsuo ^a   Komori, Kazuhiro ^a   Shinoda, Akito ^b   Yonei, Kenji ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE DIFFERENTIAL RESISTANCE (NDR); PASSIVE ELEMENTS; REAL-SPACE TRANSFER (RST); VELOCITY MODULATION TRANSISTOR;

ELECTRIC POTENTIAL; FABRICATION; FIELD EFFECT TRANSISTORS; GUNN EFFECT; HYDROGEN; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 13644274220     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851595     Document Type: Article

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