Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors

Metals and Materials International

Volumn 16, Issue 6, 2010, Pages 953-958

  Gong, Su Cheol ^a   Bang, Seokhwan ^b   Jeon, Hyeongtag ^b   Park, Hyung Ho ^c   Chang, Young Chul ^d   Chang, Ho Jung ^a  

^a Dankook University   (South Korea)

^b Hanyang University   (South Korea)

^c Yonsei University   (South Korea)

^d Korea University of Technology and Education   (South Korea)

Author keywords

Atomic layer deposition; Electrical properties; PVP (poly 4 vinylphenol) insulators; Thin film transistors; X ray diffraction; ZnO semiconductors

Indexed keywords

ATOMS; CARRIER CONCENTRATION; CRYSTAL ATOMIC STRUCTURE; ELECTRIC PROPERTIES; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; OXIDE MINERALS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; STRUCTURAL PROPERTIES; SUBSTRATES; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

DEPOSITION TEMPERATURES; FIELD-EFFECT MOBILITIES; HALL EFFECT MEASUREMENT; ON/OFF CURRENT RATIO; ORGANIC GATE INSULATOR; STRUCTURAL AND ELECTRICAL PROPERTIES; VINYLPHENOL; ZNO SEMICONDUCTORS;

ATOMIC LAYER DEPOSITION;

EID: 79951621646     PISSN: 15989623     EISSN: 20054149     Source Type: Journal    
DOI: 10.1007/s12540-010-1214-1     Document Type: Article

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