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Volumn 315, Issue 1, 2011, Pages 301-304

Tuning light absorption by band gap engineering in ZnCdO as a function of MOVPE-synthesis conditions and annealing

(5) Venkatachalapathy, Vishnukanthan a Galeckas, Augustinas a Sellappan, Raja b Chakarov, Dinko b Kuznetsov, Andrej Yu a

a UNIVERSITY OF OSLO (Norway)

b CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

A1. Band gap engineering; A1. Light absorption; A1. Phase separation; A3. Metal organic vapor phase epitaxy; B1. ZnCdO

Indexed keywords

A1. LIGHT ABSORPTION; A1. PHASE SEPARATION; A3. METAL ORGANIC VAPOR PHASE EPITAXY; B1. ZNCDO; BAND GAP ENGINEERING;

ABSORPTION; ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; CADMIUM COMPOUNDS; ENERGY GAP; EPITAXIAL GROWTH; LIGHT ABSORPTION; ORGANOMETALLICS; PHASE SEPARATION; VAPORS; ZINC SULFIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 79651475287 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.09.056 Document Type: Article

Times cited : (25)

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