Structure and electrical properties of p-type twin ZnTe nanowires

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 2, 2011, Pages 469-475

  Li, Shanying ^a,b   Jiang, Yang ^a   Wu, Di ^a   Wang, Binbin ^a   Zhang, Yugang ^a   Li, Junwei ^a   Liu, Xinmei ^a   Zhong, Honghai ^a   Chen, Lei ^a   Jie, Jiansheng ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b HENAN UNIVERSITY OF URBAN CONSTRUCTION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ELECTRICAL FIELD; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; EUTECTIC LIQUID DROPLETS; FEEDBACK MECHANISMS; GROWTH DIRECTIONS; NEGATIVE DIFFERENTIAL RESISTANCES; P-TYPE; P-TYPE CONDUCTIVITY; PEAK TO VALLEY CURRENT RATIO; RESONANT CONDITION; ROOM TEMPERATURE; SPACE CHARGES; TWIN INTERFACES; TWIN PLANES; ZINC-BLENDE; ZNTE NANOWIRE;

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRIC WIRE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; RESONANT TUNNELING; SURFACE TENSION; THERMAL EVAPORATION; X RAY DIFFRACTION; ZINC COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 79651471223     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-010-6242-7     Document Type: Article

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