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Volumn 133, Issue 5, 2011, Pages 1375-1382

Hole injection/transport materials derived from heck and sol-gel chemistry for application in solution-processed organic electronic devices

Author keywords

[No Author keywords available]

Indexed keywords

AROMATIC AMINES; CONTROL DEVICE; CROSS-LINKED POLYMERS; DEFECT-FREE; ELECTROCHEMICAL STABILITIES; EMITTING LAYER; ETHYLENEDIOXYTHIOPHENES; EXTENDED CONJUGATION; HIGH CURRENT DENSITIES; ITO ELECTRODES; ORGANIC ELECTRONIC DEVICES; ORGANOSILICATES; PEDOT:PSS; PLANARIZING; POLY(STYRENE SULFONATE); SI ATOMS; SOL-GEL CHEMISTRY; SOLUTION-PROCESSED; SOLVENT RESISTANCE; THERMAL CROSSLINKING; TRIETHOXYSILYL; TURN ON VOLTAGE;

EID: 79551716690     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja1061517     Document Type: Article
Times cited : (66)

References (39)
  • 34
    • 28844490006 scopus 로고    scopus 로고
    • The mobilities in refs 17, 33, and 35 were obtained from space charge limited current (SCLC) hole-only devices, which yield mobility values somewhat different from the values obtained from thin film transistor (TFT) characteristics as employed in this study. The relationship between the SCLC mobility and the TFT mobility can be found from a reference
    • Pasveer, W. F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P. A.; Blom, P. W. M.; de Leeuw, D. M.; Michels, M. A. J. Phys. Rev. Lett. 2005, 94, 206601 The mobilities in refs 17, 33, and 35 were obtained from space charge limited current (SCLC) hole-only devices, which yield mobility values somewhat different from the values obtained from thin film transistor (TFT) characteristics as employed in this study. The relationship between the SCLC mobility and the TFT mobility can be found from a reference
    • (2005) Phys. Rev. Lett. , vol.94 , pp. 206601
    • Pasveer, W.F.1    Cottaar, J.2    Tanase, C.3    Coehoorn, R.4    Bobbert, P.A.5    Blom, P.W.M.6    De Leeuw, D.M.7    Michels, M.A.J.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.