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Volumn 315, Issue 1, 2011, Pages 297-300
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Effect of growth parameters on MgxZn1-xO films grown by metalorganic chemical vapour deposition
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Author keywords
A1. Growth temperature; A1. VI II Ratio; A3. MOCVD; B1. MgxZn 1 xO
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Indexed keywords
A1. GROWTH TEMPERATURE;
A1. VI/II RATIO;
B1. MGXZN 1-XO;
BOUND EXCITON PEAKS;
DEFECT-RELATED EMISSION;
DISORDERED ALLOY;
GROWTH PARAMETERS;
LOW TEMPERATURE PHOTOLUMINESCENCE;
LOW TEMPERATURES;
METALORGANIC CHEMICAL VAPOUR DEPOSITION;
MG CONCENTRATIONS;
MG CONTENT;
MG INCORPORATION;
MOCVD;
NEAR BAND EDGE EMISSIONS;
OXYGEN GAS;
OXYGEN PRECURSORS;
PHASE SEGREGATIONS;
S-SHAPED;
TEMPERATURE DEPENDENCE;
TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;
TERTIARY BUTANOL;
CHEMICAL VAPOR DEPOSITION;
GROWTH TEMPERATURE;
OXYGEN;
PHASE SEPARATION;
PHOTOLUMINESCENCE;
SCANNING ELECTRON MICROSCOPY;
STACKING FAULTS;
THIN FILMS;
X RAY DIFFRACTION;
ZINC;
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EID: 79551684793
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.08.001 Document Type: Article |
Times cited : (2)
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References (14)
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