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Volumn 315, Issue 1, 2011, Pages 297-300

Effect of growth parameters on MgxZn1-xO films grown by metalorganic chemical vapour deposition

Author keywords

A1. Growth temperature; A1. VI II Ratio; A3. MOCVD; B1. MgxZn 1 xO

Indexed keywords

A1. GROWTH TEMPERATURE; A1. VI/II RATIO; B1. MGXZN 1-XO; BOUND EXCITON PEAKS; DEFECT-RELATED EMISSION; DISORDERED ALLOY; GROWTH PARAMETERS; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; METALORGANIC CHEMICAL VAPOUR DEPOSITION; MG CONCENTRATIONS; MG CONTENT; MG INCORPORATION; MOCVD; NEAR BAND EDGE EMISSIONS; OXYGEN GAS; OXYGEN PRECURSORS; PHASE SEGREGATIONS; S-SHAPED; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TERTIARY BUTANOL;

EID: 79551684793     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.08.001     Document Type: Article
Times cited : (2)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.