Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 91-95

  Jha, Smita ^a   Wiedmann, Monika K ^b   Kuan, T S ^c   Song, Xueyan ^a   Babcock, S E ^a   Kuech, T F ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

A2. Growth from vapor; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting IIIV materials

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; ANTIMONIDES; BLOCK COPOLYMER LITHOGRAPHY; DEFECT REDUCTION; GAAS; GAAS SUBSTRATES; GROWTH BEHAVIOR; GROWTH FROM VAPORS; HETEROEPITAXIAL; HETEROEPITAXIAL GROWTH; INAS; LATTICE-MISMATCHED; SEMI CONDUCTING III-V MATERIALS; STRAIN-DEPENDENT; THREADING DISLOCATION;

BLOCK COPOLYMERS; COALESCENCE; COPOLYMERIZATION; DEFECTS; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM ARSENIDE; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SURFACE MORPHOLOGY; SURFACES; VAPORS;

GALLIUM ALLOYS;

EID: 79551683431     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.050     Document Type: Article

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