First principles study of the electronic properties of twinned SiC nanowires

Journal of Nanoparticle Research

Volumn 13, Issue 1, 2011, Pages 185-191

  Wang, Zhiguo ^a,b   Wang, Shengjie ^a   Zhang, Chunlai ^a   Li, Jingbo ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Ab initio; Electronic properties; Modeling and simulation; Twinned SiC nanowires

Indexed keywords

AB INITIO; BAND GAPS; DIRECT BAND GAP; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; GENERALIZED GRADIENT APPROXIMATIONS; HIGHEST OCCUPIED MOLECULAR ORBITAL; LOWEST UNOCCUPIED MOLECULAR ORBITAL; MODELING AND SIMULATION; SIC NANOWIRE;

CHEMICAL BONDS; COMPUTER SIMULATION; DENSITY FUNCTIONAL THEORY; ENERGY GAP; MOLECULAR MODELING; MOLECULAR ORBITALS; NANOWIRES; OPTOELECTRONIC DEVICES; SILICON CARBIDE;

ELECTRONIC PROPERTIES;

NANOWIRE; SILICON CARBIDE;

ARTICLE; CALCULATION; DENSITY FUNCTIONAL THEORY; ELECTRONICS; PRIORITY JOURNAL;

EID: 79551609817     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-010-0017-0     Document Type: Article

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