Annealing temperature-dependent interfacial behavior of sequentially plasma-activated silicon bonded wafers

Journal of Microelectromechanical Systems

Volumn 20, Issue 1, 2011, Pages 17-20

  Howlader, Matiar M R ^a   Zhang, Fangfang ^a   Kim, Moon J ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b The University of Texas at Dallas   (United States)

Author keywords

Annealing; electron energy loss spectroscopy (EELS); interfacial amorphous layer; sequentially plasma activated bonding (SPAB); surface roughness; void density; water contact angle

Indexed keywords

AMORPHOUS LAYER; ELECTRON ENERGY LOSS SPECTROSCOPY (EELS); SEQUENTIALLY PLASMA-ACTIVATED BONDING (SPAB); VOID DENSITY; WATER CONTACT ANGLE;

ANNEALING; BONDING; CHEMICAL ACTIVATION; CONTACT ANGLE; DIFFUSION BONDING; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; METAL ANALYSIS; NUCLEAR INSTRUMENTATION; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SURFACE CHEMISTRY; SURFACE DEFECTS; SURFACE PROPERTIES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79551599583     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2010.2090502     Document Type: Article

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