Grain boundary effects in nanocrystalline diamond

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 9, 2008, Pages 2163-2168

  Mareš, Jiří J ^a   Hubík, Pavel ^a   Krištofik, Jozef ^a   Nesládek, Miloš ^a,b  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY EFFECTS; CHEMICAL VAPOUR DEPOSITIONS; DIAMOND GRAINS; DOPED NANOCRYSTALLINE DIAMONDS; EXPERIMENTAL VALUES; HEAVILY BORON DOPED; JOSEPHSON; LOW TEMPERATURES; NANOCRYSTALLINE DIAMONDS; NANOMETRE RANGES; NOISE ANALYSES; PHENOMENOLOGICAL MODELS; QUANTUM PHENOMENON; SUPERCONDUCTIVITY TRANSITIONS; THIN-FILMS; TRANSPORT METHODS; WEAK LINKS;

BORON; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CRITICAL CURRENTS; CRYSTAL GROWTH; DIAMONDS; ELECTRIC CONDUCTIVITY; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; PENETRATION DEPTH (SUPERCONDUCTIVITY); PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUPERCONDUCTIVITY; THICK FILMS;

DIAMOND FILMS;

EID: 54249112874     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200879705     Document Type: Conference Paper

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